Multi-layer two-dimensional semiconductor nanomaterials were successfully developed
American chemists have developed a new method using silicon telluride to fabricate two-dimensional semiconductor nanomaterials with multi-layered structures that have different shapes and orientations and can work in multiple fields. Scientists at Brown University have fabricated nanoribbons and nanoplates using silicon telluride. Silicon telluride is a pure P-type semiconductor (carrying a positive charge), widely found in many electronic and optical devices, and their hierarchical structure absorbs lithium and magnesium, meaning electrodes that can be used to make batteries. Kristi Kirski, an assistant professor of chemistry at Brown University, said the study, a silicon-based compound that forms the cornerstone of modern electrical processing and silicon telluride, is a new method we have invented that can be used to fabricate multilayers Of the two-dimensional nano-materials. The Kirsch team synthesized these new materials in a tube furnace by vapor deposition. When the silicon and telluride are heated in the tube, they evaporate and react to produce a precursor compound which is then deposited on the substrate by argon gas and the silicon telluride is subsequently removed from the precursor Compound growth. By changing the temperature of the furnace and subjecting the susceptor to different treatments, the researchers eventually fabricated nanoribbons and nanoribbons with nanoribbons of about 50 to 1000 nanometers in width and 10 micrometers in length. Moreover, different materials have different structures and their lattices have different arrangements and therefore have different properties and uses. Researchers have also demonstrated that different substrates can be used to dodge different materials (small impurities are introduced into the material during doping to change the electrical properties of the material) into these nanomaterials. In a recent study, researchers have experimentally demonstrated that silicon telluride can be doped with aluminum as it grows on a sapphire substrate, a process that turns a material from a P-type semiconductor into an N-type semiconductor (carrying a negative charge) . The researchers also pointed out that the new method of obtaining the material is not only stable, but also easy to be improved. They plan to test the electrical and optical properties of the resulting nanomaterials. Carburizing Furnace,Gas Carburizing Furnace,Vacuum Carburizing Furnace,Continuous Carburizing Furnace Zhejiang Shangding Industrial Furnace Co., Ltd , https://www.sdindustrialfurnace.com